Collections:
Other Resources:
DOI: 10.1016/j.tsf.2017.03.047
Paper Summary:
Title: Angular dependences of SiO 2 etch rates at different bias voltages in CF 4 , C 2 F 6 , and C 4 F 8 plasmas
Author(s): Kim, Jun-Hyun; Cho, Sung-Woon; Park, Chang Jin; Chae, Heeyeop; Kim, Chang-Koo
Year: 2017
DOI: 10.1016/j.tsf.2017.03.047
URL: https://doi.org/10.1016/j.tsf.2017.03.047
Download Paper from Sci-Hub:
Received on: 2023-11-16
✍: FYIcenter.com
2023-11-18, ∼1809👍, 0💬
Popular Posts:
Paper Summary: Title: Are structured products ‘fairly’ priced? An analysis of the German market for ...
Paper Summary: Title: Monitoring Electrolyte Degradation in Electrochemical Machining Operations Yea...
Paper Summary: Title: Behind the Scenes: The Corporate Governance Preferences of Institutional Inves...
Paper Summary: Title: Testing Individuals for Coronavirus Disease 2019 (COVID-19) Author(s): , ; , ;...
Paper Summary: Title: Failed humor in conversational utterances in Spanish Author(s): Alvarado Orteg...