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DOI: 10.1109/LED.2024.3391397
Paper Summary:
Title: 1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate
Author(s): Wolf, M. (author);Brunner, F. (author);Last, C. (author);Halhoul, H. (author);Rentner, D. (author);Treidel, E. Bahat (author);Würfl, J. (author);Hilt, O. (author)
Year: 2024
DOI: 10.1109/LED.2024.3391397
URL: https://doi.org/10.1109/LED.2024.3391397
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2024-04-29, ∼1188👍, 0💬
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