DOI: 10.1109/TED.2024.3385394

Paper Summary:

Title: Asymmetric and Double-Layered Gate-All- Around Structures of 1T-DRAM for Sensing Margin and Retention Improvement

Author(s): Kwon, Semyung (author);Yun, Ilgu (author)

Year: 2024

DOI: 10.1109/TED.2024.3385394

URL: https://doi.org/10.1109/TED.2024.3385394

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